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| M28W640ECT M28W640ECB 64 Mbit (4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE - VDD = 2.7V to 3.6V Core Power Supply - VDDQ= 1.65V to 3.6V for Input/Output - VPP = 12V for fast Program (optional) s s Figure 1. Packages FBGA ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME: - 10s typical - Double Word Programming Option - Quadruple Word Programming Option TFBGA48 (ZB) 6.39 x 10.5mm s s COMMON FLASH INTERFACE MEMORY BLOCKS - Parameter Blocks (Top or Bottom location) - Main Blocks s BLOCK LOCKING - All blocks locked at Power Up - Any combination of blocks can be locked - WP for Block Lock-Down TSOP48 (N) 12 x 20mm s SECURITY - 128 bit user Programmable OTP cells - 64 bit unique device identifier s s s AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Top Device Code, M28W640ECT: 8848h - Bottom Device Code, M28W640ECB: 8849h s April 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/55 M28W640ECT, M28W640ECB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 6. Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Address Inputs (A0-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 VDD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 VPP Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 2. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read Memory Array Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 3. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Read CFI Query Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Clear Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/55 M28W640ECT, M28W640ECB Block Lock-Down Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 5. Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 6. Read Block Lock Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 7. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 8. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 16 BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Lock-Down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Reading a Block's Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 9. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 10. Protection Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Program/Erase Controller Status (Bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Erase Suspend Status (Bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Erase Status (Bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Program Status (Bit 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 VPP Status (Bit 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Program Suspend Status (Bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Block Protection Status (Bit 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Reserved (Bit 0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 11. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Table 12. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 13. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 7. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 8. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 14. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 15. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 9. Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 16. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 10. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 11. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 18. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 12. Power-Up and Reset AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 19. Power-Up and Reset AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 3/55 M28W640ECT, M28W640ECB PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . . . 30 Table 20. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 30 Figure 14. TFBGA48 6.39x10.5mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline31 Table 21. TFBGA48 6.39x10.5mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data . . . 31 Figure 15. TFBGA48 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 32 Figure 16. TFBGA48 Daisy Chain - PCB Connections proposal (Top view through package) . . . . 32 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 23. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 24. Top Boot Block Addresses, M28W640ECT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 25. Bottom Boot Block Addresses, M28W640ECB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 26. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 27. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 28. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 29. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Table 30. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Table 31. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Figure 17. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Figure 18. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Figure 19. Quadruple Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . 46 Figure 20. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 47 Figure 21. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Figure 22. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 49 Figure 23. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE . . . . . . . 52 Table 32. Write State Machine Current/Next, sheet 1 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Table 33. Write State Machine Current/Next, sheet 2 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Table 34. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 4/55 M28W640ECT, M28W640ECB SUMMARY DESCRIPTION The M28W640EC is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V V DD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The device features an asymmetrical blocked architecture. The M28W640EC has an array of 135 blocks: 8 Parameter Blocks of 4 KWord and 127 Main Blocks of 32 KWord. M28W640ECT has the Parameter Blocks at the top of the memory address space while the M28W640ECB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses. The M28W640EC features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When V PP VPPLK all blocks are protected against program or erase. All blocks are locked at Power Up. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 192 bit Protection Register to increase the protection of a system design. The Protection Register is divided into a 64 bit segment and a 128 bit segment. The 64 bit segment contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. Figure 6, shows the Protection Register Memory Map. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The memory is offered in TSOP48 (12 X 20mm) and TFBGA48 (6.39 x 10.5mm, 0.75mm pitch) packages and is supplied with all the bits erased (set to '1'). Figure 2. Logic Diagram VDD VDDQ VPP 22 A0-A21 W E G RP WP M28W640ECT M28W640ECB DQ0-DQ15 16 VSS AI04378b Table 1. Signal Names A0-A21 DQ0-DQ15 E G W RP WP VDD VDDQ VPP VSS NC Address Inputs Data Input/Output Chip Enable Output Enable Write Enable Reset Write Protect Core Power Supply Power Supply for Input/Output Optional Supply Voltage for Fast Program & Erase Ground Not Connected Internally 5/55 M28W640ECT, M28W640ECB Figure 3. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 W RP VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 M28W640ECT 37 13 M28W640ECB 36 24 25 AI04379b A16 VDDQ VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 6/55 M28W640ECT, M28W640ECB Figure 4. TFBGA Connections (Top view through package) 1 2 3 4 5 6 7 8 A A13 A11 A8 VPP WP A19 A7 A4 B A14 A10 W RP A18 A17 A5 A2 C A15 A12 A9 A21 A20 A6 A3 A1 D A16 DQ14 DQ5 DQ11 DQ2 DQ8 E A0 E VDDQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0 VSS F VSS DQ7 DQ13 DQ4 VDD DQ10 DQ1 G AI04380 7/55 M28W640ECT, M28W640ECB Figure 5. Block Addresses M28W640ECT Top Boot Block Addresses M28W640ECB Bottom Boot Block Addresses 3FFFFF 4 KWords 3FF000 Total of 8 4 KWord Blocks 3F8FFF 4 KWords 3F8000 3F7FFF 32 KWords 3F0000 3FFFFF 32 KWords 3F8000 3F7FFF 32 KWords 3F0000 Total of 127 32 KWord Blocks 00FFFF 32 KWords 008000 007FFF 4 KWords Total of 127 32 KWord Blocks 007000 Total of 8 4 KWord Blocks 000FFF 32 KWords 4 KWords 000000 00FFFF 32 KWords 008000 007FFF 000000 AI04386b Note: Also see Appendix A, Tables 24 and 25 for a full listing of the Block Addresses. Figure 6. Protection Register Memory Map PROTECTION REGISTER 8Ch User Programmable OTP 85h 84h Unique device number 81h 80h Protection Register Lock 1 0 AI05520b 8/55 M28W640ECT, M28W640ECB SIGNAL DESCRIPTIONS See Figure 2 Logic Diagram and Table 1,Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A21). The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. Data Input/Output (DQ0-DQ15). The Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Write Bus operation. Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active mode. When Chip Enable is at VIH the memory is deselected, the outputs are high impedance and the power consumption is reduced to the stand-by level. Output Enable (G). The Output Enable controls data outputs during the Bus Read operation of the memory. Write Enable (W). The Write Enable controls the Bus Write operation of the memory's Command Interface. The data and address inputs are latched on the rising edge of Chip Enable, E, or Write Enable, W, whichever occurs first. Write Protect (WP). Write Protect is an input that gives an additional hardware protection for each block. When Write Protect is at VIL, the LockDown is enabled and the protection status of the block cannot be changed. When Write Protect is at VIH, the Lock-Down is disabled and the block can be locked or unlocked. (refer to Table 7, Read Protection Register and Protection Register Lock). Reset (RP). The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in reset mode: the outputs are high impedance and the current consumption is minimized. After Reset all blocks are in the Locked state. When Reset is at V IH, the device is in normal operation. Exiting reset mode the device enters read array mode, but a negative transition of Chip Enable or a change of the address is required to ensure valid data outputs. V DD Supply Voltage. VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program and Erase). V DDQ Supply Voltage. VDDQ provides the power supply to the I/O pins and enables all Outputs to be powered independently from VDD. V DDQ can be tied to V DD or can use a separate supply. V PP Program Supply Voltage. VPP is both a control input and a power supply pin. The two functions are selected by the voltage range applied to the pin. The Supply Voltage V DD and the Program Supply Voltage VPP can be applied in any order. If VPP is kept in a low voltage range (0V to 3.6V) VPP is seen as a control input. In this case a voltage lower than VPPLK gives an absolute protection against program or erase, while V PP > VPP1 enables these functions (see Table 15, DC Characteristics for the relevant values). VPP is only sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect on Program or Erase, however for Double or Quadruple Word Program the results are uncertain. If VPP is in the range 11.4V to 12.6V it acts as a power supply pin. In this condition V PP must be stable until the Program/Erase algorithm is completed (see Table 17 and 18). VSS Ground. VSS is the reference for all voltage measurements. Note: Each device in a system should have VDD, VDDQ and V PP decoupled with a 0.1F capacitor close to the pin. See Figure 8, AC Measurement Load Circuit. The PCB trace widths should be sufficient to carry the required VPP program and erase currents. 9/55 M28W640ECT, M28W640ECB BUS OPERATIONS There are six standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby, Automatic Standby and Reset. See Table 2, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Read. Read Bus operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at VIL in order to perform a read operation. The Chip Enable input should be used to enable the device. Output Enable should be used to gate data onto the output. The data read depends on the previous command written to the memory (see Command Interface section). See Figure 9, Read Mode AC Waveforms, and Table 16, Read AC Characteristics, for details of when the output becomes valid. Read mode is the default state of the device when exiting Reset or after power-up. Write. Bus Write operations write Commands to the memory or latch Input Data to be programmed. A write operation is initiated when Chip Enable and Write Enable are at V IL with Output Enable at VIH. Commands, Input Data and Addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. See Figures 10 and 11, Write AC Waveforms, and Tables 17 and 18, Write AC Characteristics, for details of the timing requirements. Output Disable. The data outputs are high impedance when the Output Enable is at V IH. Standby. Standby disables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by when Chip Enable is at VIH and the device is in read mode. The power consumption is reduced to the stand-by level and the outputs are set to high impedance, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to VIH during a program or erase operation, the device enters Standby mode when finished. Automatic Standby. Automatic Standby provides a low power consumption state during Read mode. Following a read operation, the device enters Automatic Standby after 150ns of bus inactivity even if Chip Enable is Low, VIL, and the supply current is reduced to IDD1. The data Inputs/Outputs will still output data if a bus Read operation is in progress. Reset. During Reset mode when Output Enable is Low, VIL, the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at V IL. The power consumption is reduced to the Standby level, independently from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to V SS during a Program or Erase, this operation is aborted and the memory content is no longer valid. Table 2. Bus Operations Operation Bus Read Bus Write Output Disable Standby Reset E VIL VIL VIL VIH X G VIL VIH VIH X X W VIH VIL VIH X X RP VIH VIH VIH VIH VIL WP X X X X X VPP Don't Care VDD or VPPH Don't Care Don't Care Don't Care DQ0-DQ15 Data Output Data Input Hi-Z Hi-Z Hi-Z Note: X = VIL or VIH, VPPH = 12V 5%. 10/55 M28W640ECT, M28W640ECB COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution of the Program and Erase commands. The Program/Erase Controller provides a Status Register whose output may be read at any time during, to monitor the progress of the operation, or the Program/Erase states. See Table 3, Command Codes, for a summary of the commands and see Appendix 22, Table 32, Write State Machine Current/Next, for a summary of the Command Interface. The Command Interface is reset to Read mode when power is first applied, when exiting from Reset or whenever V DD is lower than VLKO . Command sequences must be followed exactly. Any invalid combination of commands will reset the device to Read mode. Refer to Table 4, Commands, in conjunction with the text descriptions below. Read Memory Array Command The Read command returns the memory to its Read mode. One Bus Write cycle is required to issue the Read Memory Array command and return the memory to Read mode. Subsequent read operations will read the addressed location and output the data. When a device Reset occurs, the memory defaults to Read mode. Read Status Register Command The Status Register indicates when a program or erase operation is complete and the success or failure of the operation itself. Issue a Read Status Register command to read the Status Register's contents. Subsequent Bus Read operations read the Status Register at any address, until another command is issued. See Table 11, Status Register Bits, for details on the definitions of the bits. The Read Status Register command may be issued at any time, even during a Program/Erase operation. Any Read attempt during a Program/ Erase operation will automatically output the content of the Status Register. Read Electronic Signature Command The Read Electronic Signature command reads the Manufacturer and Device Codes and the Block Locking Status, or the Protection Register. The Read Electronic Signature command consists of one write cycle, a subsequent read will output the Manufacturer Code, the Device Code, the Block Lock and Lock-Down Status, or the Protection and Lock Register. See Tables 5, 6 and 7 for the valid address. Table 3. Command Codes Hex Code 01h Command Block Lock confirm Program Erase Block Lock-Down confirm Double Word Program Program Clear Status Register Quadruple Word Program Block Lock, Block Unlock, Block LockDown Read Status Register Read Electronic Signature Read CFI Query Program/Erase Suspend Protection Register Program Program/Erase Resume, Block Unlock confirm Read Memory Array 10h 20h 2Fh 30h 40h 50h 56h 60h 70h 90h 98h B0h C0h D0h FFh Read CFI Query Command The Read Query Command is used to read data from the Common Flash Interface (CFI) Memory Area, allowing programming equipment or applications to automatically match their interface to the characteristics of the device. One Bus Write cycle is required to issue the Read Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. See Appendix B, Common Flash Interface, Tables 26, 27, 28, 29, 30 and 31 for details on the information contained in the Common Flash Interface memory area. Block Erase Command The Block Erase command can be used to erase a block. It sets all the bits within the selected block to '1'. All previous data in the block is lost. If the block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. Two Bus Write cycles are required to issue the command. s The first bus cycle sets up the Erase command. 11/55 M28W640ECT, M28W640ECB The second latches the block address in the internal state machine and starts the Program/ Erase Controller. If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits b4 and b5 are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity cannot be guaranteed when the Erase operation is aborted, the block must be erased again. During Erase operations the memory will accept the Read Status Register command and the Program/Erase Suspend command, all other commands will be ignored. Typical Erase times are given in Table 8, Program, Erase Times and Program/Erase Endurance Cycles. See Appendix C, Figure 21, Erase Flowchart and Pseudo Code, for a suggested flowchart for using the Erase command. Program Command The memory array can be programmed word-byword. Two bus write cycles are required to issue the Program Command. s The first bus cycle sets up the Program command. s The second latches the Address and the Data to be written and starts the Program/Erase Controller. During Program operations the memory will accept the Read Status Register command and the Program/Erase Suspend command. Typical Program times are given in Table 8, Program, Erase Times and Program/Erase Endurance Cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the block containing the memory location must be erased and reprogrammed. See Appendix C, Figure 17, Program Flowchart and Pseudo Code, for the flowchart for using the Program command. Double Word Program Command This feature is offered to improve the programming throughput, writing a page of two adjacent words in parallel.The two words must differ only for the address A0. Programming should not be attempted when VPP is not at VPPH. Three bus write cycles are necessary to issue the Double Word Program command. s The first bus cycle sets up the Double Word Program Command. s The second bus cycle latches the Address and the Data of the first word to be written. s The third bus cycle latches the Address and the Data of the second word to be written and starts the Program/Erase Controller. s Read operations output the Status Register content after the programming has started. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the block containing the memory location must be erased and reprogrammed. See Appendix C, Figure 18, Double Word Program Flowchart and Pseudo Code, for the flowchart for using the Double Word Program command. Quadruple Word Program Command This feature is offered to improve the programming throughput, writing a page of four adjacent words in parallel.The four words must differ only for the addresses A0 and A1. Programming should not be attempted when VPP is not at VPPH. Five bus write cycles are necessary to issue the Quadruple Word Program command. s The first bus cycle sets up the Quadruple Word Program Command. s The second bus cycle latches the Address and the Data of the first word to be written. s The third bus cycle latches the Address and the Data of the second word to be written. s The fourth bus cycle latches the Address and the Data of the third word to be written. s The fifth bus cycle latches the Address and the Data of the fourth word to be written and starts the Program/Erase Controller. Read operations output the Status Register content after the programming has started. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the block containing the memory location must be erased and reprogrammed. See Appendix C, Figure 19, Quadruple Word Program Flowchart and Pseudo Code, for the flowchart for using the Quadruple Word Program command. Clear Status Register Command The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the Status Register to `0'. One bus write cycle is required to issue the Clear Status Register command. The bits in the Status Register do not automatically return to `0' when a new Program or Erase command is issued. The error bits in the Status Register should be cleared before attempting a new Program or Erase command. Program/Erase Suspend Command The Program/Erase Suspend command is used to pause a Program or Erase operation. One bus write cycle is required to issue the Program/Erase command and pause the Program/Erase controller. 12/55 M28W640ECT, M28W640ECB During Program/Erase Suspend the Command Interface will accept the Program/Erase Resume, Read Array, Read Status Register, Read Electronic Signature and Read CFI Query commands. Additionally, if the suspend operation was Erase then the Program, Double Word Program, Quadruple Word Program, Block Lock, Block Lock-Down or Protection Program commands will also be accepted. The block being erased may be protected by issuing the Block Protect, Block Lock or Protection Program commands. When the Program/ Erase Resume command is issued the operation will complete. Only the blocks not being erased may be read or programmed correctly. During a Program/Erase Suspend, the device can be placed in a pseudo-standby mode by taking Chip Enable to V IH. Program/Erase is aborted if Reset turns to VIL. See Appendix C, Figure 20, Program Suspend & Resume Flowchart and Pseudo Code, and Figure 22, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/ Erase Suspend command. Program/Erase Resume Command The Program/Erase Resume command can be used to restart the Program/Erase Controller after a Program/Erase Suspend operation has paused it. One Bus Write cycle is required to issue the command. Once the command is issued subsequent Bus Read operations read the Status Register. See Appendix C, Figure 20, Program Suspend & Resume Flowchart and Pseudo Code, and Figure 22, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/ Erase Resume command. Protection Register Program Command The Protection Register Program command is used to Program the 128 bit user One-Time-Programmable (OTP) segment of the Protection Register. The segment is programmed 16 bits at a time. When shipped all bits in the segment are set to `1'. The user can only program the bits to `0'. Two write cycles are required to issue the Protection Register Program command. s The first bus cycle sets up the Protection Register Program command. s The second latches the Address and the Data to be written to the Protection Register and starts the Program/Erase Controller. Read operations output the Status Register content after the programming has started. The segment can be protected by programming bit 1 of the Protection Lock Register (see Figure 6, Protection Register Memory Map). Attempting to program a previously protected Protection Register will result in a Status Register error. The protection of the Protection Register is not reversible. The Protection Register Program cannot be suspended. Block Lock Command The Block Lock command is used to lock a block and prevent Program or Erase operations from changing the data in it. All blocks are locked at power-up or reset. Two Bus Write cycles are required to issue the Block Lock command. s The first bus cycle sets up the Block Lock command. s The second Bus Write cycle latches the block address. The lock status can be monitored for each block using the Read Electronic Signature command. Table. 10 shows the protection status after issuing a Block Lock command. The Block Lock bits are volatile, once set they remain set until a hardware reset or power-down/ power-up. They are cleared by a Blocks Unlock command. Refer to the section, Block Locking, for a detailed explanation. Block Unlock Command The Blocks Unlock command is used to unlock a block, allowing the block to be programmed or erased. Two Bus Write cycles are required to issue the Blocks Unlock command. s The first bus cycle sets up the Block Unlock command. s The second Bus Write cycle latches the block address. The lock status can be monitored for each block using the Read Electronic Signature command. Table. 10 shows the protection status after issuing a Block Unlock command. Refer to the section, Block Locking, for a detailed explanation. Block Lock-Down Command A locked block cannot be Programmed or Erased, or have its protection status changed when WP is low, VIL. When WP is high, VIH, the Lock-Down function is disabled and the locked blocks can be individually unlocked by the Block Unlock command. Two Bus Write cycles are required to issue the Block Lock-Down command. s The first bus cycle sets up the Block Lock command. s The second Bus Write cycle latches the block address. The lock status can be monitored for each block using the Read Electronic Signature command. Locked-Down blocks revert to the locked (and not 13/55 M28W640ECT, M28W640ECB locked-down) state when the device is reset on power-down. Table. 10 shows the protection status after issuing a Block Lock-Down command. Table 4. Commands Cycles Bus Write Operations 1st Cycle Op. Add Data X X X X X X X FFh 70h 90h 98h 20h Refer to the section, Block Locking, for a detailed explanation. Commands 2nd Cycle Op. Add Data Read Read RA X RD SRD IDh QD D0h PD PD1 3rd Cycle 4th Cycle Add Data 5th Cycle Op. Add Data Op. Add Data Op. Read Memory Array Read Status Register Read Electronic Signature Read CFI Query Erase Program Double Word Program(3) Quadruple Word Program(4) Clear Status Register Program/Erase Suspend Program/Erase Resume Block Lock Block Unlock Block Lock-Down Protection Register Program 1+ Write 1+ Write 1+ Write 1+ Write 2 2 3 Write Write Write Read SA(2) Read Write QA BA PA 40h or Write 10h 30h Write PA1 Write PA2 PD2 5 1 1 1 2 2 2 2 Write Write Write Write Write Write Write Write X X X X X X X X 56h(5) Write PA1 50h B0h D0h 60h 60h 60h C0h Write Write Write PD1 Write PA2 PD2 Write PA3 PD3 Write PA4 PD4 BA BA BA 01h D0h 2Fh PRD Write PRA Note: 1. X = Don't Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code), QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection Register Data. 2. The signature addresses are listed in Tables 5, 6 and 7. 3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0. 4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1. 5. To be characterized. Table 5. Read Electronic Signature Code Manufacture Code M28W640ECT Device Code M28W640ECB Note: RP = VIH. Device E VIL VIL VIL G VIL VIL VIL W VIH VIH VIH A0 VIL VIH VIH A1 VIL VIL VIL A2-A7 0 0 0 A8-A21 Don't Care Don't Care Don't Care DQ0-DQ7 20h 48h 49h DQ8-DQ15 00h 88h 88h 14/55 M28W640ECT, M28W640ECB Table 6. Read Block Lock Signature Block Status Locked Block Unlocked Block Locked-Down Block E VIL VIL VIL G VIL VIL VIL W VIH VIH VIH A0 VIL VIL VIL A1 VIH VIH VIH A2-A7 0 0 0 A8-A11 A12-A21 DQ0 1 0 X (1) DQ1 0 0 1 DQ2-DQ15 00h 00h 00h Don't Care Block Address Don't Care Block Address Don't Care Block Address Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section. Table 7. Read Protection Register and Lock Register Word Lock Unique ID 0 Unique ID 1 Unique ID 2 Unique ID 3 OTP 0 OTP 1 OTP 2 OTP 3 OTP 4 OTP 5 OTP 6 OTP 7 E VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL G VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL VIL W VIH VIH VIH VIH VIH VIH VIH VIH VIH VIH VIH VIH VIH A0-A7 80h 81h 82h 83h 84h 85h 86h 87h 88h 89h 8Ah 8Bh 8Ch A8-A21 Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care Don't Care DQ0 0 ID data ID data ID data ID data OTP data OTP data OTP data OTP data OTP data OTP data OTP data OTP data DQ1 OTP Prot. data ID data ID data ID data ID data OTP data OTP data OTP data OTP data OTP data OTP data OTP data OTP data DQ2 0 ID data ID data ID data ID data OTP data OTP data OTP data OTP data OTP data OTP data OTP data OTP data DQ3-DQ7 DQ8-DQ15 00h ID data ID data ID data ID data OTP data OTP data OTP data OTP data OTP data OTP data OTP data OTP data 00h ID data ID data ID data ID data OTP data OTP data OTP data OTP data OTP data OTP data OTP data OTP data 15/55 M28W640ECT, M28W640ECB Table 8. Program, Erase Times and Program/Erase Endurance Cycles M28W640EC Parameter Word Program Double Word Program Quadruple Word Program Main Block Program VPP = VDD VPP = 12V 5% Parameter Block Program VPP = VDD VPP = 12V 5% Main Block Erase VPP = VDD VPP = 12V 5% Parameter Block Erase VPP = VDD Program/Erase Cycles (per Block) 100,000 0.4 10 s cycles 1 0.4 10 10 s s Test Conditions Min VPP = VDD VPP = 12V 5% VPP = 12V 5% VPP = 12V 5% Typ 10 10 10 0.16/0.08 (1) 0.32 0.02/0.01 (1) 0.04 1 Max 200 200 200 5 5 4 4 10 s s s s s s s s Unit Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands respectively. BLOCK LOCKING The M28W640EC features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency. This locking scheme has three levels of protection. s Lock/Unlock - this first level allows softwareonly control of block locking. s Lock-Down - this second level requires hardware interaction before locking can be changed. VPP VPPLK - the third level offers a complete hardware protection against program and erase on all blocks. s The protection status of each block can be set to Locked, Unlocked, and Lock-Down. Table 10, defines all of the possible protection states (WP, DQ1, DQ0), and Appendix C, Figure 23, shows a flowchart for the locking operations. Reading a Block's Lock Status The lock status of every block can be read in the Read Electronic Signature mode of the device. To enter this mode write 90h to the device. Subsequent reads at the address specified in Table 6, will output the protection status of that block. The lock status is represented by DQ0 and DQ1. DQ0 indicates the Block Lock/Unlock status and is set by the Lock command and cleared by the Unlock command. It is also automatically set when entering Lock-Down. DQ1 indicates the Lock-Down status and is set by the Lock-Down command. It cannot be cleared by software, only by a hardware reset or power-down. The following sections explain the operation of the locking system. Locked State The default status of all blocks on power-up or after a hardware reset is Locked (states (0,0,1) or (1,0,1)). Locked blocks are fully protected from any program or erase. Any program or erase operations attempted on a locked block will return an error in the Status Register. The Status of a Locked block can be changed to Unlocked or Lock-Down using the appropriate software commands. An Unlocked block can be Locked by issuing the Lock command. Unlocked State Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)), can be programmed or erased. All unlocked blocks return to the Locked state after a hardware reset or when the device is powered-down. The status of an unlocked block can be changed to Locked or Locked-Down using the appropriate software commands. A locked block can be unlocked by issuing the Unlock command. 16/55 M28W640ECT, M28W640ECB Lock-Down State Blocks that are Locked-Down (state (0,1,x))are protected from program and erase operations (as for Locked blocks) but their protection status cannot be changed using software commands alone. A Locked or Unlocked block can be Locked-Down by issuing the Lock-Down command. LockedDown blocks revert to the Locked state when the device is reset or powered-down. The Lock-Down function is dependent on the WP input pin. When WP=0 (VIL), the blocks in the Lock-Down state (0,1,x) are protected from program, erase and protection status changes. When WP=1 (V IH) the Lock-Down function is disabled (1,1,1) and Locked-Down blocks can be individually unlocked to the (1,1,0) state by issuing the software command, where they can be erased and programmed. These blocks can then be relocked (1,1,1) and unlocked (1,1,0) as desired while WP remains high. When WP is low , blocks that were previously Locked-Down return to the Lock-Down state (0,1,x) regardless of any changes made while WP was high. Device reset or power-down resets all blocks , including those in Lock-Down, to the Locked state. Table 9. Block Lock Status Item Block Lock Configuration Block is Unlocked xx002 Block is Locked Block is Locked-Down DQ0=1 DQ1=1 Address Data LOCK DQ0=0 Locking Operations During Erase Suspend Changes to block lock status can be performed during an erase suspend by using the standard locking command sequences to unlock, lock or lock-down a block. This is useful in the case when another block needs to be updated while an erase operation is in progress. To change block locking during an erase operation, first write the Erase Suspend command, then check the status register until it indicates that the erase operation has been suspended. Next write the desired Lock command sequence to a block and the lock status will be changed. After completing any desired lock, read, or program operations, resume the erase operation with the Erase Resume command. If a block is locked or locked-down during an erase suspend of the same block, the locking status bits will be changed immediately, but when the erase is resumed, the erase operation will complete. Locking operations cannot be performed during a program suspend. Refer to Appendix D, Command Interface and Program/Erase Controller State, for detailed information on which commands are valid during erase suspend. 17/55 M28W640ECT, M28W640ECB Table 10. Protection Status Current Protection Status(1) (WP, DQ1, DQ0) Current State 1,0,0 1,0,1(2) 1,1,0 1,1,1 0,0,0 0,0,1(2) 0,1,1 Program/Erase Allowed yes no yes no yes no no After Block Lock Command 1,0,1 1,0,1 1,1,1 1,1,1 0,0,1 0,0,1 0,1,1 Next Protection Status(1) (WP, DQ1, DQ0) After Block Unlock Command 1,0,0 1,0,0 1,1,0 1,1,0 0,0,0 0,0,0 0,1,1 After Block Lock-Down Command 1,1,1 1,1,1 1,1,1 1,1,1 0,1,1 0,1,1 0,1,1 After WP transition 0,0,0 0,0,1 0,1,1 0,1,1 1,0,0 1,0,1 1,1,1 or 1,1,0 (3) Note: 1. The lock status is defined by the write protect pin and by DQ1 (`1' for a locked-down block) and DQ0 (`1' for a locked block) as read in the Read Electronic Signature command with A1 = VIH and A0 = VIL. 2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status. 3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110. 18/55 M28W640ECT, M28W640ECB STATUS REGISTER The Status Register provides information on the current or previous Program or Erase operation. The various bits convey information and errors on the operation. To read the Status register the Read Status Register command can be issued, refer to Read Status Register Command section. To output the contents, the Status Register is latched on the falling edge of the Chip Enable or Output Enable signals, and can be read until Chip Enable or Output Enable returns to VIH. Either Chip Enable or Output Enable must be toggled to update the latched data. Bus Read operations from any address always read the Status Register during Program and Erase operations. The bits in the Status Register are summarized in Table 11, Status Register Bits. Refer to Table 11 in conjunction with the following text descriptions. Program/Erase Controller Status (Bit 7). The Program/Erase Controller Status bit indicates whether the Program/Erase Controller is active or inactive. When the Program/Erase Controller Status bit is Low (set to `0'), the Program/Erase Controller is active; when the bit is High (set to `1'), the Program/Erase Controller is inactive, and the device is ready to process a new command. The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the bit is High . During Program, Erase, operations the Program/ Erase Controller Status bit can be polled to find the end of the operation. Other bits in the Status Register should not be tested until the Program/Erase Controller completes the operation and the bit is High. After the Program/Erase Controller completes its operation the Erase Status, Program Status, VPP Status and Block Lock Status bits should be tested for errors. Erase Suspend Status (Bit 6). The Erase Suspend Status bit indicates that an Erase operation has been suspended or is going to be suspended. When the Erase Suspend Status bit is High (set to `1'), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). Bit 7 is set within 30s of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode. When a Program/Erase Resume command is issued the Erase Suspend Status bit returns Low. Erase Status (Bit 5). The Erase Status bit can be used to identify if the memory has failed to verify that the block has erased correctly. When the Erase Status bit is High (set to `1'), the Program/ Erase Controller has applied the maximum number of pulses to the block and still failed to verify that the block has erased correctly. The Erase Status bit should be read once the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. Program Status (Bit 4). The Program Status bit is used to identify a Program failure. When the Program Status bit is High (set to `1'), the Program/Erase Controller has applied the maximum number of pulses to the byte and still failed to verify that it has programmed correctly. The Program Status bit should be read once the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). Once set High, the Program Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail. VPP Status (Bit 3). The VPP Status bit can be used to identify an invalid voltage on the VPP pin during Program and Erase operations. The VPP pin is only sampled at the beginning of a Program or Erase operation. Indeterminate results can occur if V PP becomes invalid during an operation. When the VPP Status bit is Low (set to `0'), the voltage on the V PP pin was sampled at a valid voltage; when the V PP Status bit is High (set to `1'), the VPP pin has a voltage that is below the V PP Lockout Voltage, VPPLK, the memory is protected and Program and Erase operations cannot be performed. Once set High, the V PP Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. Program Suspend Status (Bit 2). The Program Suspend Status bit indicates that a Program operation has been suspended. When the Program Suspend Status bit is High (set to `1'), a Program/ Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The Program Suspend Status should only be considered valid when the Pro- 19/55 M28W640ECT, M28W640ECB gram/Erase Controller Status bit is High (Program/ Erase Controller inactive). Bit 2 is set within 5s of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode. When a Program/Erase Resume command is issued the Program Suspend Status bit returns Low. Block Protection Status (Bit 1). The Block Protection Status bit can be used to identify if a Program or Erase operation has tried to modify the contents of a locked block. When the Block Protection Status bit is High (set to `1'), a Program or Erase operation has been attempted on a locked block. Once set High, the Block Protection Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail. Reserved (Bit 0). Bit 0 of the Status Register is reserved. Its value must be masked. Note: Refer to Appendix C, Flowcharts and Pseudo Codes, for using the Status Register. Table 11. Status Register Bits Bit 7 Name P/E.C. Status '0' '1' 6 Erase Suspend Status '0' '1' 5 Erase Status '0' '1' 4 Program Status '0' '1' 3 VPP Status '0' '1' 2 Program Suspend Status '0' '1' 1 0 Block Protection Status '0' Reserved No operation to protected blocks In Progress or Completed Program/Erase on protected Block, Abort Program Success VPP Invalid, Abort VPP OK Suspended Erase Success Program Error In progress or Completed Erase Error Busy Suspended Logic Level '1' Ready Definition Note: Logic level '1' is High, '0' is Low. 20/55 M28W640ECT, M28W640ECB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not imTable 12. Absolute Maximum Ratings Value Symbol TA TBIAS TSTG VIO VDD, VDDQ VPP Parameter Min Ambient Operating Temperature (1) Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Program Voltage - 40 - 40 - 55 - 0.6 - 0.6 - 0.6 Max 85 125 155 VDDQ+0.6 4.1 13 C C C V V V Unit plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Note: 1. Depends on range. 21/55 M28W640ECT, M28W640ECB DC AND AC PARAMETERS This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measure- ment Conditions summarized in Table 13, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 13. Operating and AC Measurement Conditions M28W640ECT, M28W640ECB Parameter Min VDD Supply Voltage VDDQ Supply Voltage (VDDQ VDD) Ambient Operating Temperature Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Note: 1. To be characterized. 70(1) Max 3.6 3.6 85 50 5 0 to VDDQ VDDQ/2 Min 3.0 1.65 - 40 85 Max 3.6 3.6 85 50 5 0 to VDDQ VDDQ/2 Min 2.7 1.65 - 40 90 Max 3.6 3.6 85 50 5 0 to VDDQ VDDQ/2 Min 2.7 1.65 - 40 10 Units Max 3.6 3.6 85 50 5 0 to VDDQ VDDQ/2 V V C pF ns V V 3.0 1.65 - 40 Figure 7. AC Measurement I/O Waveform Figure 8. AC Measurement Load Circuit VDDQ VDDQ VDDQ/2 0V AI00610 VDDQ VDD 25k DEVICE UNDER TEST 0.1F 0.1F CL 25k CL includes JIG capacitance AI00609C Table 14. Capacitance Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF Note: Sampled only, not 100% tested. 22/55 M28W640ECT, M28W640ECB Table 15. DC Characteristics Symbol ILI ILO IDD IDD1 IDD2 Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Stand-by or Automatic Stand-by) Supply Current (Reset) Test Condition 0V VIN VDDQ 0V VOUT VDDQ E = VSS, G = VIH, f = 5MHz E = VDDQ 0.2V, RP = VDDQ 0.2V RP = VSS 0.2V Program in progress VPP = 12V 5% Program in progress VPP = VDD Erase in progress VPP = 12V 5% Erase in progress VPP = VDD E = VDDQ 0.2V, Erase suspended VPP > VDD VPP VDD RP = VSS 0.2V Program in progress VPP = 12V 5% Program in progress VPP = VDD Erase in progress VPP = 12V 5% Erase in progress VPP = VDD -0.5 VDDQ 2.7V VDDQ 2.7V IOL = 100A, VDD = VDD min, VDDQ = VDDQ min IOH = -100A, VDD = VDD min, VDDQ = VDDQ min VDDQ -0.1 1.65 11.4 3.6 12.6 1 2 -0.5 VDDQ -0.4 0.7 VDDQ 1 1 1 1 3 1 9 15 15 5 10 5 10 15 Min Typ Max 1 10 18 50 50 10 20 20 20 50 400 5 5 10 5 10 5 0.4 0.8 VDDQ +0.4 VDDQ +0.4 0.1 Unit A A mA A A mA mA mA mA A A A A mA A mA A V V V V V V V V V V IDD3 Supply Current (Program) IDD4 Supply Current (Erase) IDD5 IPP IPP1 IPP2 Supply Current (Program/Erase Suspend) Program Current (Read or Stand-by) Program Current (Read or Stand-by) Program Current (Reset) IPP3 Program Current (Program) IPP4 Program Current (Erase) VIL VIH VOL VOH VPP1 VPPH VPPLK VLKO Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Program Voltage (Program or Erase operations) Program Voltage (Program or Erase operations) Program Voltage (Program and Erase lock-out) VDD Supply Voltage (Program and Erase lock-out) 23/55 M28W640ECT, M28W640ECB Figure 9. Read AC Waveforms tAVAV A0-A21 tAVQV E tELQV tELQX G tGLQV tGLQX DQ0-DQ15 VALID tGHQX tGHQZ tEHQX tEHQZ VALID tAXQX ADDR. VALID CHIP ENABLE OUTPUTS ENABLED DATA VALID STANDBY AI04387 Table 16. Read AC Characteristics M28W640EC Symbol tAVAV tAVQV tAXQX (1) tEHQX (1) tEHQZ (1) tELQV (2) tELQX (1) tGHQX (1) tGHQZ (1) tGLQV (2) tGLQX (1) Alt tRC tACC tOH tOH tHZ tCE tLZ tOH tDF tOE tOLZ Parameter 70 Address Valid to Next Address Valid Address Valid to Output Valid Address Transition to Output Transition Chip Enable High to Output Transition Chip Enable High to Output Hi-Z Chip Enable Low to Output Valid Chip Enable Low to Output Transition Output Enable High to Output Transition Output Enable High to Output Hi-Z Output Enable Low to Output Valid Output Enable Low to Output Transition Min Max Min Min Max Max Min Min Max Max Min 70(3) 70(3) 0 0 20 70(3) 0 0 20 20 0 85 85 85 0 0 20 85 0 0 20 20 0 90 90 90 0 0 25 90 0 0 25 30 0 10 100 100 0 0 25 100 0 0 25 30 0 ns ns ns ns ns ns ns ns ns ns ns Unit Note: 1. Sampled only, not 100% tested. 2. G may be delayed by up to t ELQV - tGLQV after the falling edge of E without increasing tELQV . 3. To be characterized. 24/55 PROGRAM OR ERASE tAVAV VALID tAVWH tWHAX A0-A21 E tWHEH tELWL G tWHWL tWHGL W tWLWH tWHEL tWHDX CMD or DATA STATUS REGISTER tELQV Figure 10. Write AC Waveforms, Write Enable Controlled tDVWH DQ0-DQ15 COMMAND tWPHWH tQVWPL WP tVPHWH tQVVPL VPP SET-UP COMMAND CONFIRM COMMAND OR DATA INPUT STATUS REGISTER READ 1st POLLING AI04388 M28W640ECT, M28W640ECB 25/55 M28W640ECT, M28W640ECB Table 17. Write AC Characteristics, Write Enable Controlled M28W640EC Symbol tAVAV tAVWH tDVWH tELWL tELQV tQVVPL (1,2) tQVWPL tVPHWH (1) tWHAX tWHDX tWHEH tWHEL tWHGL tWHWL tWLWH tWPHWH tWPH tWP tVPS tAH tDH tCH Alt tWC tAS tDS tCS Write Cycle Time Address Valid to Write Enable High Data Valid to Write Enable High Chip Enable Low to Write Enable Low Chip Enable Low to Output Valid Output Valid to VPP Low Output Valid to Write Protect Low VPP High to Write Enable High Write Enable High to Address Transition Write Enable High to Data Transition Write Enable High to Chip Enable High Write Enable High to Chip Enable Low Write Enable High to Output Enable Low Write Enable High to Write Enable Low Write Enable Low to Write Enable High Write Protect High to Write Enable High Parameter 70 Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min 70(3) 45 45 0 70(3) 0 0 200 0 0 0 25 20 25 45 45 85 85 45 45 0 85 0 0 200 0 0 0 25 20 25 45 45 90 90 50 50 0 90 0 0 200 0 0 0 30 30 30 50 50 10 100 50 50 0 100 0 0 200 0 0 0 30 30 30 50 50 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit Note: 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (V PP < 3.6V). 3. To be characterized. 26/55 PROGRAM OR ERASE tAVAV VALID tAVEH tEHAX A0-A21 W tEHWH tWLEL G tEHEL tEHGL E tELEH tEHDX CMD or DATA tWPHEH STATUS REGISTER tQVWPL tELQV tDVEH Figure 11. Write AC Waveforms, Chip Enable Controlled DQ0-DQ15 COMMAND WP tVPHEH tQVVPL VPP POWER-UP AND SET-UP COMMAND CONFIRM COMMAND OR DATA INPUT STATUS REGISTER READ 1st POLLING AI04389 M28W640ECT, M28W640ECB 27/55 M28W640ECT, M28W640ECB Table 18. Write AC Characteristics, Chip Enable Controlled M28W640EC Symbol tAVAV tAVEH tDVEH tEHAX tEHDX tEHEL tEHGL tEHWH tELEH tELQV tQVVPL (1,2) tQVWPL tVPHEH (1) tWLEL tWPHEH tVPS tCS tWH tCP Alt tWC tAS tDS tAH tDH tCPH Write Cycle Time Address Valid to Chip Enable High Data Valid to Chip Enable High Chip Enable High to Address Transition Chip Enable High to Data Transition Chip Enable High to Chip Enable Low Chip Enable High to Output Enable Low Chip Enable High to Write Enable High Chip Enable Low to Chip Enable High Chip Enable Low to Output Valid Output Valid to VPP Low Data Valid to Write Protect Low VPP High to Chip Enable High Write Enable Low to Chip Enable Low Write Protect High to Chip Enable High Parameter 70 Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min 70(3) 45 45 0 0 25 25 0 45 70(3) 0 0 200 0 45 85 85 45 45 0 0 25 25 0 45 85 0 0 200 0 45 90 90 50 50 0 0 30 30 0 50 90 0 0 200 0 50 10 100 50 50 0 0 30 30 0 50 100 0 0 200 0 50 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit Note: 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (V PP < 3.6V). 3. To be characterized. 28/55 M28W640ECT, M28W640ECB Figure 12. Power-Up and Reset AC Waveforms W, E, G tPHWL tPHEL tPHGL tPHWL tPHEL tPHGL RP tVDHPH VDD, VDDQ Power-Up Reset AI03537b tPLPH Table 19. Power-Up and Reset AC Characteristics M28W640EC Symbol tPHWL tPHEL tPHGL tPLPH (1,2) Parameter Test Condition 70 85 50 30 100 50 90 50 30 100 50 10 50 30 100 50 During Program and Erase others Unit Reset High to Write Enable Low, Chip Enable Low, Output Enable Low Reset Low to Reset High Supply Voltages High to Reset High Min Min Min Min 50 30 100 50 s ns ns s tVDHPH(3) Note: 1. The device Reset is possible but not guaranteed if tPLPH < 100ns. 2. Sampled only, not 100% tested. 3. It is important to assert RP in order to allow proper CPU initialization during power up or reset. 29/55 M28W640ECT, M28W640ECB PACKAGE MECHANICAL Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline A2 1 N e E B N/2 D1 D A CP DIE C TSOP-a Note: Drawing is not to scale. A1 L Table 20. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data millimeters Symbol Typ A A1 A2 B C D D1 E e L N CP 0.50 0.05 0.95 0.17 0.10 19.80 18.30 11.90 - 0.50 0 48 0.10 Min Max 1.20 0.15 1.05 0.27 0.21 20.20 18.50 12.10 - 0.70 5 0.0197 0.0020 0.0374 0.0067 0.0039 0.7795 0.7205 0.4685 - 0.0197 0 48 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.7953 0.7283 0.4764 - 0.0279 5 inches 30/55 M28W640ECT, M28W640ECB Figure 14. TFBGA48 6.39x10.5mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline D D1 FD SD FE SE E E1 BALL "A1" e ddd e b A2 A1 A BGA-Z34 Note: Drawing is not to scale. Table 21. TFBGA48 6.39x10.5mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data millimeters Symbol Typ A A1 A2 b D D1 ddd E E1 e FD FE SD SE 10.500 3.750 0.750 0.570 3.375 0.375 0.375 10.400 - - - - - - 0.400 6.390 5.250 0.350 6.290 - 0.260 1.000 0.450 6.490 - 0.100 10.600 - - - - - - 0.4134 0.1476 0.0295 0.0224 0.1329 0.0148 0.0148 0.4094 - - - - - - 0.0157 0.2516 0.2067 0.0138 0.2476 - Min Max 1.200 0.0102 0.0394 0.0177 0.2555 - 0.0039 0.4173 - - - - - - Typ Min Max 0.0472 inches 31/55 M28W640ECT, M28W640ECB Figure 15. TFBGA48 Daisy Chain - Package Connections (Top view through package) 1 2 3 4 5 6 7 8 A B C D E F AI04390 Figure 16. TFBGA48 Daisy Chain - PCB Connections proposal (Top view through package) 1 2 3 4 5 6 7 8 A START POINT B C D E F END POINT AI04391 32/55 M28W640ECT, M28W640ECB PART NUMBERING Table 22. Ordering Information Scheme Example: Device Type M28 Operating Voltage W = VDD = 2.7V to 3.6V; VDDQ = 1.65V to 3.6V Device Function 640EC = 64 Mbit (4 Mb x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 70 = 70 ns (to be characterized) 85 = 85 ns 90 = 90 ns 10 = 100 ns Package N = TSOP48: 12 x 20 mm ZB = TFBGA48: 6.39 x 10.5mm, 0.75 mm pitch Temperature Range 1 = 0 to 70 C 6 = -40 to 85 C Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-Free Package, Standard Packing F = Lead-Free Package, Tape & Reel Packing M28W640ECT 90 N 6 T 33/55 M28W640ECT, M28W640ECB Table 23. Daisy Chain Ordering Scheme Example: Device Type M28W640EC Daisy Chain -ZB = TFBGA48: 6.39 x 10.5mm, 0.75 mm pitch Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-Free Package, Standard Packing F = Lead-Free Package, Tape & Reel Packing M28W640EC -ZB T Note:Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. 34/55 M28W640ECT, M28W640ECB APPENDIX A. BLOCK ADDRESS TABLES Table 24. Top Boot Block Addresses, M28W640ECT # 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 Size (KWord) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range 3FF000-3FFFFF 3FE000-3FEFFF 3FD000-3FDFFF 3FC000-3FCFFF 3FB000-3FBFFF 3FA000-3FAFFF 3F9000-3F9FFF 3F8000-3F8FFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF 3D0000-3D7FFF 3C8000-3CFFFF 3C0000-3C7FFF 3B8000-3BFFFF 3B0000-3B7FFF 3A8000-3AFFFF 3A0000-3A7FFF 398000-39FFFF 390000-397FFF 388000-38FFFF 380000-387FFF 378000-37FFFF 370000-377FFF 368000-36FFFF 360000-367FFF 358000-35FFFF 350000-357FFF 348000-34FFFF 340000-347FFF 338000-33FFFF 330000-337FFF 328000-32FFFF 320000-327FFF 318000-31FFFF 310000-317FFF 308000-30FFFF 300000-307FFF 2F8000-2FFFFF 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 2F0000-2F7FFF 2E8000-2EFFFF 2E0000-2E7FFF 2D8000-2DFFFF 2D0000-2D7FFF 2C8000-2CFFFF 2C0000-2C7FFF 2B8000-2BFFFF 2B0000-2B7FFF 2A8000-2AFFFF 2A0000-2A7FFF 298000-29FFFF 290000-297FFF 288000-28FFFF 280000-287FFF 278000-27FFFF 270000-277FFF 268000-26FFFF 260000-267FFF 258000-25FFFF 250000-257FFF 248000-24FFFF 240000-247FFF 238000-23FFFF 230000-237FFF 228000-22FFFF 220000-227FFF 218000-21FFFF 210000-217FFF 208000-20FFFF 200000-207FFF 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 35/55 M28W640ECT, M28W640ECB 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF 038000-03FFFF 030000-037FFF 028000-02FFFF 130 131 132 133 134 32 32 32 32 32 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 000000-007FFF 36/55 M28W640ECT, M28W640ECB Table 25. Bottom Boot Block Addresses, M28W640ECB # 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 Size (KWord) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Address Range 3F8000-3FFFFF 3F0000-3F7FFF 3E8000-3EFFFF 3E0000-3E7FFF 3D8000-3DFFFF 3D0000-3D7FFF 3C8000-3CFFFF 3C0000-3C7FFF 3B8000-3BFFFF 3B0000-3B7FFF 3A8000-3AFFFF 3A0000-3A7FFF 398000-39FFFF 390000-397FFF 388000-38FFFF 380000-387FFF 378000-37FFFF 370000-377FFF 368000-36FFFF 360000-367FFF 358000-35FFFF 350000-357FFF 348000-34FFFF 340000-347FFF 338000-33FFFF 330000-337FFF 328000-32FFFF 320000-327FFF 318000-31FFFF 310000-317FFF 308000-30FFFF 300000-307FFF 2F8000-2FFFFF 2F0000-2F7FFF 2E8000-2EFFFF 2E0000-2E7FFF 2D8000-2DFFFF 2D0000-2D7FFF 2C8000-2CFFFF 2C0000-2C7FFF 2B8000-2BFFFF 2B0000-2B7FFF 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 2A8000-2AFFFF 2A0000-2A7FFF 298000-29FFFF 290000-297FFF 288000-28FFFF 280000-287FFF 278000-27FFFF 270000-277FFF 268000-26FFFF 260000-267FFF 258000-25FFFF 250000-257FFF 248000-24FFFF 240000-247FFF 238000-23FFFF 230000-237FFF 228000-22FFFF 220000-227FFF 218000-21FFFF 210000-217FFF 208000-20FFFF 200000-207FFF 1F8000-1FFFFF 1F0000-1F7FFF 1E8000-1EFFFF 1E0000-1E7FFF 1D8000-1DFFFF 1D0000-1D7FFF 1C8000-1CFFFF 1C0000-1C7FFF 1B8000-1BFFFF 1B0000-1B7FFF 1A8000-1AFFFF 1A0000-1A7FFF 198000-19FFFF 190000-197FFF 188000-18FFFF 180000-187FFF 178000-17FFFF 170000-177FFF 168000-16FFFF 160000-167FFF 158000-15FFFF 150000-157FFF 148000-14FFFF 140000-147FFF 37/55 M28W640ECT, M28W640ECB 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 138000-13FFFF 130000-137FFF 128000-12FFFF 120000-127FFF 118000-11FFFF 110000-117FFF 108000-10FFFF 100000-107FFF 0F8000-0FFFFF 0F0000-0F7FFF 0E8000-0EFFFF 0E0000-0E7FFF 0D8000-0DFFFF 0D0000-0D7FFF 0C8000-0CFFFF 0C0000-0C7FFF 0B8000-0BFFFF 0B0000-0B7FFF 0A8000-0AFFFF 0A0000-0A7FFF 098000-09FFFF 090000-097FFF 088000-08FFFF 080000-087FFF 078000-07FFFF 070000-077FFF 068000-06FFFF 060000-067FFF 058000-05FFFF 050000-057FFF 048000-04FFFF 040000-047FFF 038000-03FFFF 030000-037FFF 028000-02FFFF 020000-027FFF 018000-01FFFF 010000-017FFF 008000-00FFFF 007000-007FFF 006000-006FFF 005000-005FFF 004000-004FFF 003000-003FFF 002000-002FFF 001000-001FFF 0 4 000000-000FFF 38/55 M28W640ECT, M28W640ECB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command (RCFI) is issued the device enters CFI Query mode and the data Table 26. Query Structure Overview Offset 00h 10h 1Bh 27h P A Reserved CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query table Alternate Algorithm-specific Extended Query table Sub-section Name Description Reserved for algorithm-specific information Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) Additional information specific to the Alternate Algorithm (optional) structure is read from the memory. Tables 26, 27, 28, 29, 30 and 31 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 31, Security Code area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by ST. Issue a Read command to return to Read mode. Note: Query data are always presented on the lowest order data outputs. Table 27. CFI Query Identification String Offset 00h 01h 02h-0Fh 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0020h 8848h 8849h reserved 0051h 0052h 0059h 0003h 0000h 0035h Address for Primary Algorithm extended Query table (see Table 29) 0000h 0000h 0000h 0000h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor specified algorithm supported (0000h means none exists) Address for Alternate Algorithm extended Query table (0000h means none exists) NA P = 35h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Query Unique ASCII String "QRY" Manufacturer Code Device Code Reserved "Q" "R" "Y" Intel compatible Description Value ST Top Bottom NA Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are `0'. 39/55 M28W640ECT, M28W640ECB Table 28. CFI Query System Interface Information Offset 1Bh Data 0027h Description VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Typical time-out per single word program = 2n s Typical time-out for Double/Quadruple Word Program = 2n s Typical time-out per individual block erase = 2n ms Typical time-out for full chip erase = 2n ms Maximum time-out for Word program = 2n times typical Maximum time-out for Double/Quadruple Word Program = 2n times typical Maximum time-out per individual block erase = 2n times typical Maximum time-out for chip erase = 2n times typical Value 2.7V 1Ch 0036h 3.6V 1Dh 00B4h 11.4V 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 00C6h 0004h 0004h 000Ah 0000h 0005h 0005h 0003h 0000h 12.6V 16s 16s 1s NA 512s 512s 8s NA 40/55 M28W640ECT, M28W640ECB Table 29. Device Geometry Definition Offset Word Mode 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh M28W640ECT 2Fh 30h 31h 32h 33h 34h 2Dh 2Eh M28W640ECB 2Fh 30h 31h 32h 33h 34h Data 0017h 0001h 0000h 0003h 0000h 0002h 007Eh 0000h 0000h 0001h 0007h 0000h 0020h 0000h 0007h 0000h 0020h 0000h 007Eh 0000h 0000h 0001h Description Device Size = 2n in number of bytes Flash Device Interface Code description Maximum number of bytes in multi-byte program or page = 2n Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. Region 1 Information Number of identical-size erase block = 007Eh+1 Region 1 Information Block size in Region 1 = 0100h * 256 byte Region 2 Information Number of identical-size erase block = 0007h+1 Region 2 Information Block size in Region 2 = 0020h * 256 byte Region 1 Information Number of identical-size erase block = 0007h+1 Region 1 Information Block size in Region 1 = 0020h * 256 byte Region 2 Information Number of identical-size erase block = 007Eh=1 Region 2 Information Block size in Region 2 = 0100h * 256 byte Value 8 MByte x16 Async. 8 2 127 64 KByte 8 8 KByte 8 8 KByte 127 64 KByte 41/55 M28W640ECT, M28W640ECB Table 30. Primary Algorithm-Specific Extended Query Table Offset P = 35h (1) (P+0)h = 35h (P+1)h = 36h (P+2)h = 37h (P+3)h = 38h (P+4)h = 39h (P+5)h = 3Ah (P+6)h = 3Bh (P+7)h = 3Ch (P+8)h = 3Dh Data 0050h 0052h 0049h 0031h 0030h 0066h 0000h 0000h 0000h Major version number, ASCII Minor version number, ASCII Extended Query table contents for Primary Algorithm. Address (P+5)h contains less significant byte. bit 0 Chip Erase supported (1 = Yes, 0 = No) bit 1 Suspend Erase supported (1 = Yes, 0 = No) bit 2 Suspend Program supported (1 = Yes, 0 = No) bit 3 Legacy Lock/Unlock supported (1 = Yes, 0 = No) bit 4 Queued Erase supported (1 = Yes, 0 = No) bit 5 Instant individual block locking supported (1 = Yes, 0 = No) bit 6 Protection bits supported (1 = Yes, 0 = No) bit 7 Page mode read supported (1 = Yes, 0 = No) bit 8 Synchronous read supported (1 = Yes, 0 = No) bit 31 to 9 Reserved; undefined bits are `0' Supported Functions after Suspend Read Array, Read Status Register and CFI Query are always supported during Erase or Program operation bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No) bit 7 to 1 Reserved; undefined bits are `0' Block Lock Status Defines which bits in the Block Status Register section of the Query are implemented. Address (P+A)h contains less significant byte bit 0 Block Lock Status Register Lock/Unlock bit active (1 = Yes, 0 = No) bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No) bit 15 to 2 Reserved for future use; undefined bits are `0' VDD Logic Supply Optimum Program/Erase voltage (highest performance) bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP Supply Optimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Number of Protection register fields in JEDEC ID space. "00h," indicates that 256 protection bytes are available Protection Field 1: Protection Description This field describes user-available One Time Programmable (OTP) Protection register bytes. Some are pre-programmed with device unique serial numbers. Others are user programmable. Bits 0-15 point to the Protection register Lock byte, the section's first byte. The following bytes are factory pre-programmed and user-programmable. bit 0 to 7 Lock/bytes JEDEC-plane physical low address bit 8 to 15 Lock/bytes JEDEC-plane physical high address bit 16 to 23 "n" such that 2n = factory pre-programmed bytes bit 24 to 31 "n" such that 2n = user programmable bytes Reserved Primary Algorithm extended Query table unique ASCII string "PRI" Description Value "P" "R" "I" "1" "0" No Yes Yes No No Yes Yes No No (P+9)h = 3Eh 0001h Yes (P+A)h = 3Fh (P+B)h = 40h 0003h 0000h Yes Yes 3V (P+C)h = 41h 0030h (P+D)h = 42h 00C0h 12V (P+E)h = 43h (P+F)h = 44h (P+10)h = 45h (P+11)h = 46h (P+12)h = 47h 0001h 0080h 0000h 0003h 0004h 01 80h 00h 8 Byte 16 Byte (P+13)h = 48h Note: 1. See Table 27, offset 15 for P pointer definition. 42/55 M28W640ECT, M28W640ECB Table 31. Security Code Area Offset 80h 81h 82h 83h 84h 85h 86h 87h 88h 89h 8Ah 8Bh 8Ch Data 00XX XXXX XXXX XXXX XXXX XXXX XXXX XXXX XXXX XXXX XXXX XXXX XXXX 128 bits: User Programmable OTP 64 bits: unique device number Protection Register Lock Description 43/55 M28W640ECT, M28W640ECB APPENDIX C. FLOWCHARTS AND PSEUDO CODES Figure 17. Program Flowchart and Pseudo Code Start Write 40h or 10h program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0x40) ; /*or writeToFlash (any_address, 0x10) ; */ writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ Write Address & Data Read Status Register b7 = 1 YES b3 = 0 YES b4 = 0 YES b1 = 0 YES End NO } while (status_register.b7== 0) ; NO VPP Invalid Error (1, 2) if (status_register.b3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.b4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) if (status_register.b1==1) /*program to protect block error */ error_handler ( ) ; } AI03538b Note: 1. Status check of b1 (Protected Block), b3 (V PP Invalid) and b4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 44/55 M28W640ECT, M28W640ECB Figure 18. Double Word Program Flowchart and Pseudo Code Start Write 30h Write Address 1 & Data 1 (3) Write Address 2 & Data 2 (3) double_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2) { writeToFlash (any_address, 0x30) ; writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ /*Memory enters read status state after the Program command*/ do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ Read Status Register b7 = 1 YES b3 = 0 YES b4 = 0 YES b1 = 0 YES End NO } while (status_register.b7== 0) ; NO VPP Invalid Error (1, 2) if (status_register.b3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.b4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) if (status_register.b1==1) /*program to protect block error */ error_handler ( ) ; } AI03539b Note: 1. Status check of b1 (Protected Block), b3 (V PP Invalid) and b4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0. 45/55 M28W640ECT, M28W640ECB Figure 19. Quadruple Word Program Flowchart and Pseudo Code Start Write 56h Write Address 1 & Data 1 (3) quadruple_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2, addressToProgram3, dataToProgram3, addressToProgram4, dataToProgram4) { writeToFlash (any_address, 0x56) ; writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ Write Address 2 & Data 2 (3) writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ writeToFlash (addressToProgram3, dataToProgram3) ; /*see note (3) */ writeToFlash (addressToProgram4, dataToProgram4) ; /*see note (3) */ Write Address 3 & Data 3 (3) Write Address 4 & Data 4 (3) /*Memory enters read status state after the Program command*/ do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ Read Status Register b7 = 1 YES b3 = 0 YES b4 = 0 YES b1 = 0 YES End NO } while (status_register.b7== 0) ; NO VPP Invalid Error (1, 2) if (status_register.b3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.b4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) if (status_register.b1==1) /*program to protect block error */ error_handler ( ) ; } AI06233 Note: 1. Status check of b1 (Protected Block), b3 (V PP Invalid) and b4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1. 46/55 M28W640ECT, M28W640ECB Figure 20. Program Suspend & Resume Flowchart and Pseudo Code Start program_suspend_command ( ) { writeToFlash (any_address, 0xB0) ; writeToFlash (any_address, 0x70) ; /* read status register to check if program has already completed */ Write 70h do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ Write B0h Read Status Register b7 = 1 YES b2 = 1 YES Write FFh NO } while (status_register.b7== 0) ; NO Program Complete if (status_register.b2==0) /*program completed */ { writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Read data from another address } else { writeToFlash (any_address, 0xFF) ; read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ } } Read Data Write D0h Write FFh Program Continues AI03540b 47/55 M28W640ECT, M28W640ECB Figure 21. Erase Flowchart and Pseudo Code Start erase_command ( blockToErase ) { writeToFlash (any_address, 0x20) ; writeToFlash (blockToErase, 0xD0) ; /* only A12-A20 are significannt */ /* Memory enters read status state after the Erase Command */ Write 20h Write Block Address & D0h Read Status Register do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ b7 = 1 NO } while (status_register.b7== 0) ; YES b3 = 0 YES b4, b5 = 1 NO b5 = 0 YES b1 = 0 YES End } AI03541b NO VPP Invalid Error (1) if (status_register.b3==1) /*VPP invalid error */ error_handler ( ) ; YES Command Sequence Error (1) if ( (status_register.b4==1) && (status_register.b5==1) ) /* command sequence error */ error_handler ( ) ; NO Erase Error (1) if ( (status_register.b5==1) ) /* erase error */ error_handler ( ) ; NO Erase to Protected Block Error (1) if (status_register.b1==1) /*program to protect block error */ error_handler ( ) ; Note: If an error is found, the Status Register must be cleared before further Program/Erase operations. 48/55 M28W640ECT, M28W640ECB Figure 22. Erase Suspend & Resume Flowchart and Pseudo Code Start Write B0h erase_suspend_command ( ) { writeToFlash (any_address, 0xB0) ; writeToFlash (any_address, 0x70) ; /* read status register to check if erase has already completed */ Write 70h Read Status Register do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ b7 = 1 YES b6 = 1 YES Write FFh NO } while (status_register.b7== 0) ; NO Erase Complete if (status_register.b6==0) /*erase completed */ { writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Read data from another block or Program/Protection Program or Block Protect/Unprotect/Lock else } { writeToFlash (any_address, 0xFF) ; read_program_data ( ); /*read or program data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume erase*/ } } Write D0h Write FFh Erase Continues Read Data AI03542b 49/55 M28W640ECT, M28W640ECB Figure 23. Locking Operations Flowchart and Pseudo Code Start Write 60h locking_operation_command (address, lock_operation) { writeToFlash (any_address, 0x60) ; /*configuration setup*/ if (lock_operation==LOCK) /*to protect the block*/ writeToFlash (address, 0x01) ; else if (lock_operation==UNLOCK) /*to unprotect the block*/ writeToFlash (address, 0xD0) ; else if (lock_operation==LOCK-DOWN) /*to lock the block*/ writeToFlash (address, 0x2F) ; writeToFlash (any_address, 0x90) ; Write 01h, D0h or 2Fh Write 90h Read Block Lock States Locking change confirmed? YES Write FFh NO if (readFlash (address) ! = locking_state_expected) error_handler () ; /*Check the locking state (see Read Block Signature table )*/ writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/ } End AI04364 50/55 M28W640ECT, M28W640ECB Figure 24. Protection Register Program Flowchart and Pseudo Code Start Write C0h protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0xC0) ; Write Address & Data writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ do { status_register=readFlash (any_address) ; /* E or G must be toggled*/ Read Status Register b7 = 1 YES b3 = 0 YES b4 = 0 YES b1 = 0 YES End NO } while (status_register.b7== 0) ; NO VPP Invalid Error (1, 2) if (status_register.b3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.b4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) if (status_register.b1==1) /*program to protect block error */ error_handler ( ) ; } AI04381 Note: 1. Status check of b1 (Protected Block), b3 (V PP Invalid) and b4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 51/55 M28W640ECT, M28W640ECB APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE Table 32. Write State Machine Current/Next, sheet 1 of 2. Current State Read Array Read Status Read Elect.Sg. Read CFI Query Lock Setup Lock Cmd Error Lock (complete) Prot. Prog. Setup Prot. Prog. (continue) Prot. Prog. (complete) Prog. Setup Program (continue) Prog. Sus Status Prog. Sus Read Array Prog. Sus Read Elect.Sg. Prog. Sus Read CFI Program (complete) Erase Setup Erase Cmd.Error Erase (continue) Erase Sus Read Sts Erase Sus Read Array Erase Sus Read Elect.Sg. Erase Sus Read CFI Erase (complete) SR bit 7 "1" "1" "1" "1" "1" "1" "1" "1" "0" "1" "1" "0" "1" "1" Data When Read Array Status Electronic Signature CFI Status Status Status Status Status Status Status Status Status Array Electronic Signature CFI Status Status Status Status Status Array Electronic Signature CFI Status Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Read Array Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Read Array Program (continue) Program Suspend to Read Array Program Suspend to Read Array Program Suspend to Read Array Program Suspend to Read Array Program Setup Erase Setup Erase (continue) Program (continue) Program (continue) Program (continue) Program (continue) Read Array Program Setup Command Input (and Next State) Read Array (FFh) Program Setup (10/40h) Program Setup Program Setup Program Setup Erase Setup (20h) Ers. Setup Erase Setup Erase Setup Erase Setup Lock (complete) Erase Confirm (D0h) Prog/Ers Suspend (B0h) Read Array Read Array Read Array Read Array Lock Cmd Error Read Array Read Array Protection Register Program Protection Register Program continue Erase Setup Read Array Program Prog. Sus Read Sts Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Read Array Erase CmdError Read Array Erase Sus Read Sts Erase (continue) Erase (continue) Erase (continue) Erase (continue) Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Read Array Erase (continue) Program (continue) Program (continue) Program (continue) Program (continue) Program (continue) Prog. Sus Read Sts Prog. Sus Read Sts Prog. Sus Read Sts Prog. Sus Read Sts Read Status Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Prog. Sus Read Array Read Array Read Status Read Array Lock (complete) Prog/Ers Resume (D0h) Read Status (70h) Read Sts. Read Status Read Status Read Status Clear Status (50h) Read Array Read Array Read Array Read Array Read Array Prog.Setup Read Array Read Array Read Array Lock Command Error Read Array Read Array Program Setup Program Setup Erase Setup Erase Setup Lock Command Error Read Status Read Status Read Array Read Array "1" "1" "1" "1" "1" "0" "1" "1" Erase Command Error Read Array Program Setup Erase Setup Erase Command Error Read Status Read Array Erase (continue) Program Setup Program Setup Program Setup Program Setup Program Setup Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Erase Sus Read Array Erase Setup Erase (continue) Erase (continue) Erase (continue) Erase (continue) Erase (continue) Erase Sus Erase Sus Read Sts Read Array Erase Sus Erase Sus Read Sts Read Array Erase Sus Erase Sus Read Sts Read Array Erase Sus Erase Sus Read Sts Read Array Read Status Read Array "1" "1" "1" Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend. 52/55 M28W640ECT, M28W640ECB Table 33. Write State Machine Current/Next, sheet 2 of 2. Command Input (and Next State) Current State Read Elect.Sg. (90h) Read CFI Query (98h) Lock Setup (60h) Lock Setup Lock Setup Lock Setup Lock Setup Prot. Prog. Setup (C0h) Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Prot. Prog. Setup Lock Confirm (01h) Lock Down Confirm (2Fh) Read Array Read Array Read Array Read Array Lock (complete) Read Array Read Array Unlock Confirm (D0h) Read Array Read Status Read Elect.Sg. Read Elect.Sg. Read CFI Query Read Elect.Sg. Read CFI Query Read Elect.Sg. Read CFI Query Read CFI Query Read Elect.Sg. Read CFI Query Lock Setup Lock Cmd Error Lock (complete) Prot. Prog. Setup Prot. Prog. (continue) Prot. Prog. (complete) Prog. Setup Program (continue) Prog. Suspend Read Status Prog. Suspend Read Array Prog. Suspend Read Elect.Sg. Prog. Suspend Read CFI Program (complete) Erase Setup Erase Cmd.Error Erase (continue) Erase Suspend Read Ststus Erase Suspend Read Array Erase Suspend Read Elect.Sg. Erase Suspend Erase Suspend Read Elect.Sg. Read CFI Query Erase Suspend Erase Suspend Read Elect.Sg. Read CFI Query Erase Suspend Erase Suspend Read Elect.Sg. Read CFI Query Read Elect.Sg. Read CFI Query Prog. Suspend Prog. Suspend Read Elect.Sg. Read CFI Query Prog. Suspend Prog. Suspend Read Elect.Sg. Read CFI Query Prog. Suspend Prog. Suspend Read Elect.Sg. Read CFI Query Prog. Suspend Prog. Suspend Read Elect.Sg. Read CFI Query Read Elect.Sg. Read CFIQuery Read Elect.Sg. Read CFI Query Lock Command Error Read Elect.Sg. Read CFI Query Read Elect.Sg. Read CFI Query Lock Setup Lock Setup Protection Register Program Protection Register Program (continue) Lock Setup Prot. Prog. Setup Program Program (continue) Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Program Suspend Read Array Lock Setup Prot. Prog. Setup Read Array Erase (continue) Read Array Program (continue) Program (continue) Program (continue) Program (continue) Read Array Erase Command Error Lock Setup Prot. Prog. Setup Erase (continue) Lock Setup Lock Setup Lock Setup Lock Setup Lock Setup Erase Suspend Read Array Erase Suspend Read Array Erase Suspend Read Array Erase Suspend Read Array Prot. Prog. Setup Read Array Erase (continue) Erase (continue) Erase (continue) Erase (continue) Erase Suspend Erase Suspend Erase Suspend Read CFI Query Read Elect.Sg. Read CFI Query Erase (complete) Read Elect.Sg. Read CFI Query Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection. 53/55 M28W640ECT, M28W640ECB REVISION HISTORY Table 34. Document Revision History Date 17-Jun-2002 Version -01 First Issue Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 01 equals 1.0). Document Revision History moved to end of document. Minimum VDDQ voltage changed from 2.7V to 1.65V. Note removed from Figure 6, Protection Register Memory Map. Note removed from Table 7, Read Protection Register and Lock Register, and DQ2 value changed. "Double Word Program Command" and "Quadruple Word Program Command" paragraphs clarified. Part numbers corrected in Figures 2, 3 and 5. Lead-Free Package options added (see Table 22, Ordering Information Scheme and Table 23, Daisy Chain Ordering Scheme.) Revision Details 03-Oct-2002 1.1 29-Apr-2003 1.2 54/55 M28W640ECT, M28W640ECB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 55/55 |
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